Hasan M Nayfeh 
contact information
Senior Research and Development Engineer, Quantum ComputingThomas J. Watson Research Center, Yorktown Heights, NY USA
links
Professional Associations
Professional Associations: IEEE Electron Devices Society (EDS)2014
Butted SOI junction isolation structures and devices and method of fabrication
Johnson, Jeffrey B and Narasimha, Shreesh and Nayfeh, Hasan M and Ontalus, Viorel and Robison, Robert R
US Patent 8,741,725
Abstract
Johnson, Jeffrey B and Narasimha, Shreesh and Nayfeh, Hasan M and Ontalus, Viorel and Robison, Robert R
US Patent 8,741,725
Abstract
2013
Structure and method for manufacturing asymmetric devices
Nayfeh, Hasan M and Bryant, Andres and Kumar, Arvind and Rovedo, Nivo and Robison, Robert
US Patent 8,482,075
Abstract
Nayfeh, Hasan M and Bryant, Andres and Kumar, Arvind and Rovedo, Nivo and Robison, Robert
US Patent 8,482,075
Abstract
2011
REPLACEMENT METAL GATE STRUCTURE AND METHODS OF MANUFACTURE
Sameer H Jain, Jeffrey B. Johnson, Ying Li, Hasan M. Nayfeh, Ravikumar Ramachandran
trench, metal gate, metal, materials science, electronic engineering, dielectric, composite material
Abstract
Sameer H Jain, Jeffrey B. Johnson, Ying Li, Hasan M. Nayfeh, Ravikumar Ramachandran
trench, metal gate, metal, materials science, electronic engineering, dielectric, composite material
Abstract
2009
Method of creating asymmetric field-effect-transistors
Gregory G. Freeman, Shreesh Narasimha, Ning Su, Hasan M. Nayfeh, Nivo Rovedo, Werner A. Rausch, Jian Yu
transistor, substrate, second source, halo, field effect transistor, engineering, electronic engineering
Abstract
Gregory G. Freeman, Shreesh Narasimha, Ning Su, Hasan M. Nayfeh, Nivo Rovedo, Werner A. Rausch, Jian Yu
transistor, substrate, second source, halo, field effect transistor, engineering, electronic engineering
Abstract
2007
Semiconductor structure and method of making same
Xiaomeng Chen, Shwu-Jen Jeng, Byeong Y. Kim, Hasan M. Nayfeh
undercut, semiconductor, metal gate, materials science, gate oxide, electronic engineering
Abstract
Xiaomeng Chen, Shwu-Jen Jeng, Byeong Y. Kim, Hasan M. Nayfeh
undercut, semiconductor, metal gate, materials science, gate oxide, electronic engineering
Abstract
Method of making a semiconductor structure
Xiaomeng Chen, Shwu-Jen Jeng, Byeong Y. Kim, Hasan M. Nayfeh
undercut, semiconductor, metal gate, materials science, gate oxide, electronic engineering
Abstract
Xiaomeng Chen, Shwu-Jen Jeng, Byeong Y. Kim, Hasan M. Nayfeh
undercut, semiconductor, metal gate, materials science, gate oxide, electronic engineering
Abstract
2006
Semiconductor structure having undercut-gate-oxide gate stack enclosed by protective barrier material
Xiaomeng Chen, Shwu-Jen Jeng, Byeong Y. Kim, Hasan M. Nayfeh
undercut, semiconductor, metal gate, materials science, gate oxide, electronic engineering
Abstract
Xiaomeng Chen, Shwu-Jen Jeng, Byeong Y. Kim, Hasan M. Nayfeh
undercut, semiconductor, metal gate, materials science, gate oxide, electronic engineering
Abstract
STRESS LINER SURROUNDED FACETLESS EMBEDDED STRESSOR MOSFET
Byeong Y. Kim, Shahid A. Butt, Xiaomeng Chen, Shwu-Jen J. Jeng, Hasan M. Nayfeh, Deepal Wehella-Gamage
transistor, substrate, structural engineering, stressor, silicon nitride, materials science, mosfet, facet, etching, epitaxy, composite material
Abstract
Byeong Y. Kim, Shahid A. Butt, Xiaomeng Chen, Shwu-Jen J. Jeng, Hasan M. Nayfeh, Deepal Wehella-Gamage
transistor, substrate, structural engineering, stressor, silicon nitride, materials science, mosfet, facet, etching, epitaxy, composite material
Abstract
METAL GATE MOSFET BY FULL SEMICONDUCTOR METAL ALLOY CONVERSION
Hasan M. Nayfeh, Mahender Kumar, Sunfei Fang, Jakub T Kedzierski, Cyril Cabral
semiconductor, metal gate, metal, materials science, mosfet, gate oxide, electronic engineering, alloy
Abstract
Hasan M. Nayfeh, Mahender Kumar, Sunfei Fang, Jakub T Kedzierski, Cyril Cabral
semiconductor, metal gate, metal, materials science, mosfet, gate oxide, electronic engineering, alloy
Abstract
2005
STRUCTURE AND METHOD FOR REDUCING MILLER CAPACITANCE IN FIELD EFFECT TRANSISTORS
Hasan M. Nayfeh, Andrew Waite
wafer, semiconductor, materials science, insulator, gate oxide, field effect transistor, epitaxy, electronic engineering, dielectric, and gate
Abstract
Hasan M. Nayfeh, Andrew Waite
wafer, semiconductor, materials science, insulator, gate oxide, field effect transistor, epitaxy, electronic engineering, dielectric, and gate
Abstract