Effect of Capping Layer Under Forming Gas Anneal for Back-End-of-Line Oxide Semiconductor FETs
- Saketh Ram Mamidala
- Antonio La Porta
- et al.
- 2025
- DRC 2025
Dr. Donato Francesco Falcone earned his triple joint M.Sc. in Micro and Nanotechnologies for Integrated Systems in 2019 (EPFL, Grenoble INP, Politecnico di Torino). He conducted his master’s thesis at IBM Research Europe - Zurich on neuromorphic electronics, focusing on ferroelectric FinFET technology. In 2025, he obtained his Ph.D. from ETH Zurich, while conducting his research at IBM Research Europe - Zurich. His Ph.D. focused on the development, modeling, and integration of novel Resistive RAM technology into crossbar array architecture for efficient analog in-memory computing.
Developing technologies for computing tomorrow’s AI.