S. Narasimha, P. Chang, et al.
IEDM 2012
This paper presents the industry's smallest Embedded Dynamic Random Access Memory (eDRAM) implemented in IBM's 22nm SOI technology. The bit cell area of 0.026μm2 achieves ∼60% scaling over the previous generation with deep trench (DT) capacitance optimized for performance and retention requirements. We report, for the first time, the asymmetric embedded stressor, cavity implant, through gate implant, and substrate n-band innovations to maintain aggressive cell scaling for the 22nm eDRAM technology.
S. Narasimha, P. Chang, et al.
IEDM 2012
G. Wang, Carl Radens, et al.
IEEE International SOI Conference 2010
G. Wang, K. Cheng, et al.
IEDM 2006
Hsinyu Tsai, Hiroyuki Miyazoe, et al.
IEDM 2014