Experimental demonstration and tolerancing of a large-scale neural network (165,000 synapses), using phase-change memory as the synaptic weight element
- Geoffrey W. Burr
- Robert M. Shelby
- et al.
- 2014
- IEDM 2014
Publications
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15 results at IEDM 2014
First demonstration of high-Ge-content strained-Si1-xGex (x=0.5) on insulator PMOS FinFETs with high hole mobility and aggressively scaled fin dimensions and gate lengths for high-performance applications
- Pouya Hashemi
- Karthik Balakrishnan
- et al.
- 2014
- IEDM 2014
Multiple breakdown phenomena and modeling for non-uniform dielectric systems
- Ernest Y. Wu
- Baozhen Li
- et al.
- 2014
- IEDM 2014
A novel inspection and annealing procedure to rejuvenate phase change memory from cycling-induced degradations for storage class memory applications
- Win-San Khwa
- Jau-Yi Wu
- et al.
- 2014
- IEDM 2014
High performance 14nm SOI FinFET CMOS technology with 0.0174μm2 embedded DRAM and 15 levels of Cu metallization
- C.-H.C-H. Lin
- Brian Greene
- et al.
- 2014
- IEDM 2014
Reliability challenges for the 10nm node and beyond
- 2014
- IEDM 2014
Electrical characterization of FinFETs with fins formed by directed self assembly at 29 nm fin pitch using a self-aligned fin customization scheme
- Hsinyu Tsai
- Hiroyuki Miyazoe
- et al.
- 2014
- IEDM 2014
Phase Change Memory and its intended applications
- Chung Lam
- 2014
- IEDM 2014
Thin-film heterojunction field-effect transistors for ultimate voltage scaling and low-temperature large-area fabrication of active-matrix backplanes
- Bahman Hekmatshoar
- Ali Afzali-Ardakani
- 2014
- IEDM 2014
High-performance CMOS-compatible self-aligned In0.53Ga0.47As MOSFETs with GMSAT over 2200 μs/μm at VDD = 0.5 v
- Yanning Sun
- Amlan Majumdar
- et al.
- 2014
- IEDM 2014