Circuit-level benchmarking of access devices for resistive nonvolatile memory arrays
- Pritish Narayanan
- Geoffrey W. Burr
- et al.
- 2014
- IEDM 2014
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15 results at IEDM 2014
Experiment and model for deviation from Pelgrom scaling relation in device width
- Ning Lu
- J. Brown
- et al.
- 2014
- IEDM 2014
Ultra-high-Q air-core slab inductors for on-chip power conversion
- Naigang Wang
- David Goren
- et al.
- 2014
- IEDM 2014
Capacity optimization of emerging memory systems: A shannon-inspired approach to device characterization
- Jesse H. Engel
- Sukru Burc Eryilmaz
- et al.
- 2014
- IEDM 2014
0.026μm2 high performance Embedded DRAM in 22nm technology for server and SOC applications
- C. Pei
- G. Wang
- et al.
- 2014
- IEDM 2014
Experimental demonstration and tolerancing of a large-scale neural network (165,000 synapses), using phase-change memory as the synaptic weight element
- Geoffrey W. Burr
- Robert M. Shelby
- et al.
- 2014
- IEDM 2014
First demonstration of high-Ge-content strained-Si1-xGex (x=0.5) on insulator PMOS FinFETs with high hole mobility and aggressively scaled fin dimensions and gate lengths for high-performance applications
- Pouya Hashemi
- Karthik Balakrishnan
- et al.
- 2014
- IEDM 2014
Multiple breakdown phenomena and modeling for non-uniform dielectric systems
- Ernest Y. Wu
- Baozhen Li
- et al.
- 2014
- IEDM 2014
A novel inspection and annealing procedure to rejuvenate phase change memory from cycling-induced degradations for storage class memory applications
- Win-San Khwa
- Jau-Yi Wu
- et al.
- 2014
- IEDM 2014
High performance 14nm SOI FinFET CMOS technology with 0.0174μm2 embedded DRAM and 15 levels of Cu metallization
- C.-H.C-H. Lin
- Brian Greene
- et al.
- 2014
- IEDM 2014