Conference paper
A 1.2 ns/1 ns 1 K∗16 ECL dual-port cache RAM
Hyun J. Shin, P.F. Lu, et al.
ISSCC 1993
An ECL circuit with a charge-buffered active-pull-down emitter-follower stage is described. Implemented in a 0-8 /an double-poly trench-isolated selfaligned bipolar process, unloaded gate delays of 14.9ps/2.2mW, 20.7ps/1.2mW, and 24.5ps/0.77mW have been achieved. © 1992, The Institution of Electrical Engineers. All rights reserved.
Hyun J. Shin, P.F. Lu, et al.
ISSCC 1993
T.C. Chen, E. Ganin, et al.
IEEE T-ED
C.T. Chuang, Ken Chin, et al.
IEEE Journal of Solid-State Circuits
J. Warnock, J.D. Cressler, et al.
IEEE Electron Device Letters