Conference paper
Effects of gate-to-body tunneling current on PD/SOI CMOS SRAM
R.V. Joshi, C.T. Chuang, et al.
VLSI Technology 2001
An ECL circuit with a charge-buffered active-pull-down emitter-follower stage is described. Implemented in a 0-8 /an double-poly trench-isolated selfaligned bipolar process, unloaded gate delays of 14.9ps/2.2mW, 20.7ps/1.2mW, and 24.5ps/0.77mW have been achieved. © 1992, The Institution of Electrical Engineers. All rights reserved.
R.V. Joshi, C.T. Chuang, et al.
VLSI Technology 2001
S.K. Wiedmann, Tze Chiang Chen, et al.
IEEE Electron Device Letters
C.T. Chuang, Ken Chin, et al.
IEEE Journal of Solid-State Circuits
J. Warnock, P.F. Lu, et al.
IEDM 1990