Fuad E. Doany, Clint L. Schow, et al.
SPIE-P-W 2011
We present a silicon photonics optical link utilizing heterogeneously integrated photonic devices driven by low-power advanced 32-nm CMOS integrated circuits. The photonic components include a quantum-confined Stark effect electroabsorption modulator and an edge-coupled waveguide photodetector, both made of III-V material wafer bonded on silicon-on-insulator wafers. The photonic devices are wire bonded to the CMOS chips and mounted on a custom PCB card for testing. We demonstrate an error-free operation at data rates up to 30 Gb/s and transmission over 10 km at 25 Gb/s with no measured sensitivity penalty and a timing margin penalty of 0.2 UI.
Fuad E. Doany, Clint L. Schow, et al.
SPIE-P-W 2011
Benjamin G. Lee, Jonathan E. Proesel, et al.
IPC 2012
Nicolas Dupuis
OFC 2016
William M. J. Green, Solomon Assefa, et al.
PHOTINICS 2010