S.M. Rossnagel, K.L. Saenger
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
DC and RF performance of scaled n-channel Si/SiGe modulation-doped field effect transistors (n-MODFETs) grown by ultra-high vacuum chemical vapour deposition is reported. Devices with source-to-drain spacing of 300 nm, and gate length of 80 nm (70 nm) displayed fmax = 194 GHz (175 GHz) and FT = 70 GHz (79 GHz).
S.M. Rossnagel, K.L. Saenger
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
S.J. Koester, G. Dehlinger, et al.
GFP 2005
M. Arafa, P. Fay, et al.
IEEE Electron Device Letters
I. Adesida, M. Arafa, et al.
Microelectronic Engineering