W. Lu, X.W. Wang, et al.
IEEE Electron Device Letters
DC and RF performance of scaled n-channel Si/SiGe modulation-doped field effect transistors (n-MODFETs) grown by ultra-high vacuum chemical vapour deposition is reported. Devices with source-to-drain spacing of 300 nm, and gate length of 80 nm (70 nm) displayed fmax = 194 GHz (175 GHz) and FT = 70 GHz (79 GHz).
W. Lu, X.W. Wang, et al.
IEEE Electron Device Letters
I. Adesida, M. Arafa, et al.
Microelectronic Engineering
S. Christiansen, P.M. Mooney, et al.
MRS Proceedings 2001
S.J. Koester, B.-U. Klepser, et al.
DRC 1998