Conference paper
40-Gb/s circuits built from a 120-GHz f T SiGe technology
Greg Freeman, Mounir Meghelli, et al.
IEEE Journal of Solid-State Circuits
A static frequency divider designed in a 210-GHz fT, 0.13-μm SiGe bipolar technology is reported. At a -5.5-V power supply, the circuit consumes 44 mA per latch (140 mA total for the chip, with input-output stages). With single-ended sine wave clock input, the divider is operational from 7.5 to 91.6 GHz. Differential clocking under the same conditions extends the frequency range to 96.6 GHz. At -5.0 V and 100 mA total current (28 mA per latch), the divider operates from 2 to 85.2 GHz (single-ended sine wave input).
Greg Freeman, Mounir Meghelli, et al.
IEEE Journal of Solid-State Circuits
Timothy O. Dickson, Yong Liu, et al.
CICC 2014
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CSICS 2008
Woogeun Rhee, Herschel Ainspan, et al.
CICC 2003