Very low voltage (VLV) design
Ramon Bertran, Pradip Bose, et al.
ICCD 2017
An embedded digital temperature sensor based on a single-ended probe is implemented in a 28 nm fully depleted siliconon-insulator process. The nMOS-only ring-oscillator probe uses singlepoint calibration based on body-bias tuning of its well for process compensation. Nonlinearity compensation is implemented on-chip in custom digital logic, resulting in an area-efficient (225 μm2 per probe, 11 482 μm2 for the full system) sensor while achieving -1.4 °C/ +1.3 °C accuracy using 2.0 nJ/sample and maintaining functionality over a 0.62-1.2 V range, making it suitable for temperature monitoring in digital systems-on-chip.
Ramon Bertran, Pradip Bose, et al.
ICCD 2017
Ankur Agrawal, Monodeep Kar, et al.
VLSI Technology 2023
Timothy Dickson, Zeynep Deniz, et al.
VLSI Technology and Circuits 2022
Guénolé Lallement, Fady Abouzeid, et al.
IEEE JSSC