Jean-Olivier Plouchart, Jonghae Kim, et al.
ESSCIRC 2003
A 90-nm silicon-on-insulator (SOI) CMOS system on-chip integrates high-performance FETs with 243-GHz Ft, 208-GHz Fmax, 1.45-mS/μm gm, and sub 1.1-dB NFmin up to 26 GHz. Inductor Q of 20, VNCAP of 1.8-fF/μm2, varactor with a tuning range as high as 25:1, and a low-loss microstrip. Transmission lines were successfully integrated without extra masks and processing steps. SOI and its low parasitic junction capacitance enables this high level of performance and will expand the use of CMOS for millimeter-wave applications. © 2005 IEEE.
Jean-Olivier Plouchart, Jonghae Kim, et al.
ESSCIRC 2003
Neric Fong, Jean-Olivier Plouchart, et al.
VLSI Circuits 2002
Jean-Olivier Plouchart, Jonghae Kim, et al.
ISLPED 2003
Jean-Olivier Plouchart
CSICS 2011