Wooram Lee, Caglar Ozdag, et al.
IEEE Journal of Solid-State Circuits
A 90-nm silicon-on-insulator (SOI) CMOS system on-chip integrates high-performance FETs with 243-GHz Ft, 208-GHz Fmax, 1.45-mS/μm gm, and sub 1.1-dB NFmin up to 26 GHz. Inductor Q of 20, VNCAP of 1.8-fF/μm2, varactor with a tuning range as high as 25:1, and a low-loss microstrip. Transmission lines were successfully integrated without extra masks and processing steps. SOI and its low parasitic junction capacitance enables this high level of performance and will expand the use of CMOS for millimeter-wave applications. © 2005 IEEE.
Wooram Lee, Caglar Ozdag, et al.
IEEE Journal of Solid-State Circuits
Daeik D. Kim, Ongyeun Cho, et al.
CSICS 2008
Jonghae Kim, Jean-Olivier Plouchart, et al.
IEDM 2003
Scott K. Springer, Sungjae Lee, et al.
IEEE Transactions on Electron Devices