Noise performance of a low base resistance 200 GHz SiGe technology
- D.R. Greenberg
- B. Jagannathan
- et al.
- 2002
- IEDM 2002
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9 results for Susan Sweeney
SiGe HBT Power Amplifier design using 0.35 μm BiCMOS technology with through-silicon-via
- Jingyang Zhang
- Dawn Wang
- et al.
- 2011
- ASICON 2011
Inter-laboratory comparison of CMOS distortion measurements
- Kate A. Remley
- Joe Gering
- et al.
- 2007
- ARFTG 2007
SiGe HBTs for millimeter-wave applications with simultaneously optimized f T and f max of 300 GHz
- J.-S. Rieh
- D.R. Greenberg
- et al.
- 2004
- RFIC 2004
Low-noise performance near BVCEO in a 200 GHz SiGe technology at different collector design points
- D.R. Greenberg
- S. Sweeney
- et al.
- 2003
- IMS 2003
Noise performance scaling in high-speed silicon RF technologies
- D.R. Greenberg
- S. Sweeney
- et al.
- 2003
- SiRF 2003
A 243-GHz Ft and 208-GHz Fmax, 90-nm SOI CMOS SoC technology with low-power mmWave digital and RF circuit capability
- Jean-Olivier Plouchart
- Noah Zamdmer
- et al.
- 2005
- IEEE Transactions on Electron Devices
Design automation methodology and rf/analog modeling for rf CMOS and SiGe BiCMOS technologies
- David L. Harame
- Kim M. Newton
- et al.
- 2003
- IBM J. Res. Dev
Noise performance and considerations for integrated RF/analog/mixed-signal design in a high-performance SiGe BiCMOS technology
- D.R. Greenberg
- S. Sweeney
- et al.
- 2001
- Technical Digest - International Electron Devices Meeting