Frank Stem
C R C Critical Reviews in Solid State Sciences
Magneto-transport measurements of the 2D hole system (2DHS) in p-type Si-Si1-xGex heterostructures identify the integer quantum Hall effect (IQHE) at dominantly odd-integer filling factors v and two low-temperature insulating phases (IPs) at v = 1.5 and v ≲ 0.5, with re-entrance to the quantum Hall effect at v = 1. The temperature dependence, current-voltage characteristics, and tilted field and illumination responses of the IP at v = 1.5 indicate that the important physics is associated with an energy degeneracy of adjacent Landau levels of opposite spin, which provides a basis for consideration of an intrinsic, many-body origin.
Frank Stem
C R C Critical Reviews in Solid State Sciences
H.D. Dulman, R.H. Pantell, et al.
Physical Review B
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
M.A. Lutz, R.M. Feenstra, et al.
Surface Science