200 mm SiGe-HBT technology for wireless and mixed-signal applications
- D.L. Harame
- K. Schonenberg
- et al.
- 1994
- IEDM 1994
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138 results for B.S. Meyerson
Optimization of SiGe HBT Technology for High Speed Analog and Mixed-Signal Applications
- D.L. Harame
- J.M.C. Stork
- et al.
- 1993
- IEDM 1993
Vertical Profile Optimization of Very High Frequency Epitaxial Si- and SiGe-Base Bipolar Transistors
- E.F. Crabbé
- B.S. Meyerson
- et al.
- 1993
- IEDM 1993
Single crystal emitter gap for epitaxial Si- and SiGe-base transistors
- J.H. Comfort
- E.F. Crabbe
- et al.
- 1991
- IEDM 1991
Epitaxial-base double-poly self-aligned bipolar transistors
- E. Ganin
- T.C. Chen
- et al.
- 1990
- IEDM 1990
SiGe-base heterojunction bipolar transistors: Physics and design issues
- G.L. Patton
- J.M.C. Stork
- et al.
- 1990
- IEDM 1990
Profile leverage in self-aligned epitaxial Si or SiGe base bipolar technology
- J.H. Comfort
- G.L. Patton
- et al.
- 1990
- IEDM 1990
Sub-30ps ECL circuits using high-fT Si and SiGe epitaxial base SEEW transistors
- J.N. Burghartz
- J.H. Comfort
- et al.
- 1990
- IEDM 1990
Low temperature operation of Si and SiGe bipolar transistors
- E.F. Crabbe
- G.L. Patton
- et al.
- 1990
- IEDM 1990
Self-aligned bipolar npn transistor with 60 nm epitaxial base
- J.N. Burghartz
- S. Mader
- et al.
- 1989
- IEDM 1989