Crystallinity and wet etch behavior of HfO2 films grown by MOCVD
Katherine L. Saenger, Cyril Cabral Jr., et al.
MRS Proceedings 2003
A method for measuring metal barrier heights, work function and fixed charge densities in metal/SiO2/Si capacitors is developed and verified. This technique is based on theoretical studies of tunneling phenomenon through a potential barrier and requires measurement of current versus voltage sweeps at two different temperatures. Unlike the commonly used capacitance method, this method does not require a set of capacitors with different gate oxide thickness for determining work functions and fixed charge densities in metal/SiO2/Si capacitors. Hence, this method provides a fast means for investigating metal work function and fixed charge densities in metal-gated SiO2 capacitors. © 2002 American Institute of Physics.
Katherine L. Saenger, Cyril Cabral Jr., et al.
MRS Proceedings 2003
Q. Huang, B.C. Baker-O'Neal, et al.
JES
X. Chen, S. Fang, et al.
VLSI Technology 2006
Jakub Kedzierski, Diane Boyd, et al.
IEDM 2003