Crystallinity and wet etch behavior of HfO2 films grown by MOCVD
Katherine L. Saenger, Cyril Cabral Jr., et al.
MRS Proceedings 2003
A method for measuring metal barrier heights, work function and fixed charge densities in metal/SiO2/Si capacitors is developed and verified. This technique is based on theoretical studies of tunneling phenomenon through a potential barrier and requires measurement of current versus voltage sweeps at two different temperatures. Unlike the commonly used capacitance method, this method does not require a set of capacitors with different gate oxide thickness for determining work functions and fixed charge densities in metal/SiO2/Si capacitors. Hence, this method provides a fast means for investigating metal work function and fixed charge densities in metal-gated SiO2 capacitors. © 2002 American Institute of Physics.
Katherine L. Saenger, Cyril Cabral Jr., et al.
MRS Proceedings 2003
J.-P. Han, H. Utomo, et al.
IEDM 2006
Takeshi Nogami, Tibor Bolom, et al.
IEDM 2010
Sufi Zafar, Alessandro Callegari, et al.
IEDM 2002