A. Reisman, M. Berkenblit, et al.
JES
Paper
A novel approach to characterization of progressive breakdown in high-k/metal gate stacks
Abstract
Dielectric breakdown (BD) of nFETs with TiN metal gates and HfO2/interfacial layer with 1.09 nm EOT is studied. Occurrence of progressive BD at low current levels is demonstrated. A new measurement methodology for extraction of the PBD time and its dependence on gate voltage are reported. © 2008 Elsevier Ltd. All rights reserved.
Related
Surendra B. Anantharaman, Joachim Kohlbrecher, et al.
MRS Fall Meeting 2020
J.R. Thompson, Yang Ren Sun, et al.
Physica A: Statistical Mechanics and its Applications
J.A. Barker, D. Henderson, et al.
Molecular Physics