High performance gate first HfSiON dielectric satisfying 45nm node requirements
- M.A. Quevedo-Lopez
- S. Krishnan
- et al.
- 2005
- IEDM 2005
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7 results for P.D. Kirsch
A new methodology for characterizing the progressive BD of HfO 2/SiO2 metal gate stacks
- R. Pagano
- S. Lombardo
- et al.
- 2008
- SBMicro 2008
High performance FDSOI CMOS technology with metal gate and high-k
- Bruce Doris
- Y.-H. Kim
- et al.
- 2005
- VLSI Technology 2005
Synthesis and control of ultra thin gate oxides for the 90 and 65 NM nodes
- Joseph F. Shepard Jr.
- Anthony Chou
- et al.
- 2005
- RTP 2005
A novel approach to characterization of progressive breakdown in high-k/metal gate stacks
- R. Pagano
- S. Lombardo
- et al.
- 2008
- Microelectronics Reliability
Mobility and charge trapping comparison for crystalline and amorphous HfON and HfSiON gate dielectrics
- P.D. Kirsch
- M.A. Quevedo-Lopez
- et al.
- 2006
- Applied Physics Letters
Nitrogen interface engineering in Al 2O 3 capacitors for improved thermal stability
- P.D. Kirsch
- D.-G. Park
- et al.
- 2004
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures