Skip to main content
Research
Focus areas
Blog
Publications
Careers
About
Back
Focus areas
Semiconductors
Artificial Intelligence
Quantum Computing
Hybrid Cloud
Back
About
Overview
Labs
People
Back
Semiconductors
Back
Artificial Intelligence
Back
Quantum Computing
Back
Hybrid Cloud
Back
Overview
Back
Labs
Back
People
Research
Focus areas
Semiconductors
Artificial Intelligence
Quantum Computing
Hybrid Cloud
Blog
Publications
Careers
About
Overview
Labs
People
Open IBM search field
Close
Proceedings of the IEEE
Paper
01 Jan 1963
A Relation Between the Current Density at Threshold and the Length of Fabry-Perot Type GaAs Lasers
View publication
Abstract
No abstract available.
Related
Paper
Self-induced oscillations in the stimulated light emission from GaAs injection lasers
Paper
Slow surface relaxation of germanium
Paper
Efficient electroluminescence from GaAs diodes at 300°K
Paper
Optical and electrical properties of epitaxial and diffused gaas injection lasers
View all publications