R.W. Gammon, E. Courtens, et al.
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Conference paper
A statistical study of magnetic tunnel junctions for high-density spin torque transfer-MRAM (STT-MRAM)
Abstract
We demonstrated a robust magnetic tunnel junction (MTJ) with a resistance-area product RA=8 ω-μm 2 that simultaneously satisfies the statistical requirements of high tunneling magnetoresistance TMR > 15σ(R p), write threshold spread σ(Vw)/
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