Demonstration of highly scaled FinFET SRAM cells with high-Κ/metal gate and investigation of characteristic variability for the 32 nm node and beyondH. KawasakiM. Khateret al.2008IEDM 2008
Gate length scaling and high drive currents enabled for high performance SOI technology using high-κ/metal gateK. HensonH. Buet al.2008IEDM 2008
On the difference of temperature dependence of metal gate and poly gate SOI MOSFET threshold voltagesShu-Jen HanXinlin Wanget al.2008IEDM 2008
Improved effective switching current (Ieff+) and capacitance methodology for CMOS circuit performance prediction and model-to-hardware correlationXiaojun YuShu-Jen Hanet al.2008IEDM 2008
Mobility extraction and quantum capacitance impact in high performance graphene field-effect transistor devicesZhihong ChenJoerg Appenzeller2008IEDM 2008
Experimental and theoretical analysis of factors causing asymmetrical temperature dependence of vt in High-k Metal gate CMOS with capped High-k techniquesRyosuke IijimaMariko Takayanagi2008IEDM 2008
Mechanisms of retention loss in Ge2Sb2Te 5-based phase-change memoryY.H. ShihJ.Y. Wuet al.2008IEDM 2008
22 nm technology compatible fully functional 0.1 μm 2 6T-sram cellB. HaranA. Kumaret al.2008IEDM 2008
32nm general purpose bulk CMOS technology for high performance applications at low voltageF. ArnaudJ. Liuet al.2008IEDM 2008
A statistical study of magnetic tunnel junctions for high-density spin torque transfer-MRAM (STT-MRAM)R. BeachT. Minet al.2008IEDM 2008