Improving silicon crystallinity by grain reorientation annealing
K.L. Saenger, J.P. De Souza, et al.
MRS Spring Meeting 2009
Trench-edge defects formed during epitaxial recrystallization of trench-bounded amorphized silicon (a-Si) regions are examined as a function of Si substrate crystal orientation. In Si (001), rectilinear a-Si features having edges aligned with the crystal's in-plane 〈110〉 directions recrystallize leaving trench-edge defects along all trench edges, whereas the identical features in Si (011) recrystallize without trench-edge defects along trench edges parallel to the crystal's in-plane 〈100〉 direction and with trench-edge defects along trench edges parallel to the crystal's in-plane 〈110〉 direction. The positions and lateral extent of these trench-edge defects suggest that their source is defective epitaxy on slow-growing {111} planes formed during recrystallization. A heuristic model proposed to explain the formation of these {111} planes correctly predicts the essentially defect-free recrystallization seen for rectilinear a-Si features in Si (001) having edges aligned with the crystal's in-plane 〈100〉 directions, but cannot completely account for the distinctively curved growth fronts sometimes seen at intermediate stages of recrystallization. © 2007 American Institute of Physics.
K.L. Saenger, J.P. De Souza, et al.
MRS Spring Meeting 2009
S.M. Rossnagel, K.L. Saenger
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Yanning Sun, S.J. Koester, et al.
CS MANTECH 2007
D.K. Sadana, S.W. Bedell, et al.
ECS Meeting 2005