P.M. Mooney, J.A. Ott, et al.
Applied Physics Letters
Striking nonuniformities are observed in the solid phase epitaxy (SPE) of blanket amorphized Si layers recrystallized in the presence of stress distributions induced by a patterned SiN overlayer. Measurements conducted for a range of SiN feature sizes and intrinsic stress values allowed us to isolate the effects of stress on the crystallization front. It is concluded that SiN-induced variations in SPE rates arise both from line-edge stresses, which scale with feature stress and increase SPE rates where the hydrostatic stress is compressive, and a SiN body effect, which suppresses SPE rates under the SiN features, independent of SiN stress state. © 2008 American Institute of Physics.
P.M. Mooney, J.A. Ott, et al.
Applied Physics Letters
Zhibin Ren, J. Sleight, et al.
VLSI-TSA 2006
Haizhou Yin, Z. Ren, et al.
ICSICT 2006
D.E. Kotecki, J.D. Baniecki, et al.
IBM J. Res. Dev