William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
One of the greatest challenges in fabricating a Ge-channel n-MOSFET is achieving a high n-type dopant activation within the source and drain regions. Conventional approaches to increase the electrically active doping level have been proven to be unsatisfactory, and typically the highest activation of n-type dopants is 4× 1019 cm-3 using phosphorus. This article describes a method to enhance the activation level of n-type dopants in Ge. Coimplantation of phosphorus and antimony leads to dopant activation over 1× 1020 cm-3 at 500°C. The enhancement of n-type dopant activation is attributed to reducing the implantation damage upon annealing due to increase in solid solubility of the dopants. © 2009 The Electrochemical Society.
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
Fernando Marianno, Wang Zhou, et al.
INFORMS 2021
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
J.R. Thompson, Yang Ren Sun, et al.
Physica A: Statistical Mechanics and its Applications