Conference paper
Performance measurement and data base design
Alfonso P. Cardenas, Larry F. Bowman, et al.
ACM Annual Conference 1975
The paper reviews our recent progress and current challenges in implementing advanced gate stacks composed of high-κ dielectric materials and metal gates in mainstream Si CMOS technology. In particular, we address stacks of doped polySi gate electrodes on ultrathin layers of high-κ dielectrics, dual-workfunction metal-gate technology, and fully silicided gates. Materials and device characterization, processing, and integration issues are discussed. © Copyright 2006 by International Business Machines Corporation.
Alfonso P. Cardenas, Larry F. Bowman, et al.
ACM Annual Conference 1975
Robert E. Donovan
INTERSPEECH - Eurospeech 2001
Daniel M. Bikel, Vittorio Castelli
ACL 2008
S. Sattanathan, N.C. Narendra, et al.
CONTEXT 2005