Conference paper
Some experimental results on placement techniques
Maurice Hanan, Peter K. Wolff, et al.
DAC 1976
The paper reviews our recent progress and current challenges in implementing advanced gate stacks composed of high-κ dielectric materials and metal gates in mainstream Si CMOS technology. In particular, we address stacks of doped polySi gate electrodes on ultrathin layers of high-κ dielectrics, dual-workfunction metal-gate technology, and fully silicided gates. Materials and device characterization, processing, and integration issues are discussed. © Copyright 2006 by International Business Machines Corporation.
Maurice Hanan, Peter K. Wolff, et al.
DAC 1976
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