Impact of substrate bias on GIDL for thin-BOX ETSOI devices
Pranita Kulkarni, Q. Liu, et al.
SISPAD 2011
Strained-silicon-on-insulator (SSOI) undoped-body high-κ /metal-gate n-channel fin-shaped field-effect transistors (nFinFETs) at scaled gate lengths and pitches (i.e., LGATE ∼25 nm and a contacted gate pitch of 130 nm) were fabricated using a gate-first flow. A long and narrow fin layout (i.e., fin length ∼1 μm) was leveraged to preserve uniaxial tensile strain in the transistors. These devices exhibit drive currents suitable for high-performance logic technology. The change in the slope of RON - LGATE (dRON/dLGATE), transconductance G MSAT, and injection velocity (vinj) measurements indicate a ∼15% mobility-induced ION enhancement with SSOI relative to SOI nFinFETs at ultrashort gate lengths. Raman measurements conducted on SSOI substrates after fin formation demonstrate the preservation of ∼1.3-GPa uniaxial tensile strain even after 1100 °C annealing. © 2011 IEEE.
Pranita Kulkarni, Q. Liu, et al.
SISPAD 2011
A. Khakifirooz, Kangguo Cheng, et al.
VLSI Technology 2012
Kangguo Cheng, A. Khakifirooz, et al.
VLSI Technology 2011
X. Yang, Kingsuk Maitra, et al.
IEEE International SOI Conference 2011