K. Barmak, G.A. Lucadamo, et al.
Journal of Applied Physics
Ambipolar electrical transport is reported in single-wall carbon nanotube (SWNT) field-effect transistors. In particular, the properties of SWNT junctions to TiC are discussed in detail. The carbide-nanotube junctions are abrupt and robust. In contrast to planar junctions, these contacts present low resistance for the injection of both p- and n-type carriers―the apparent barrier height of the junction is modified by the gate field. Thus SWNTs offer the novel possibility of ambipolar Ohmic contacts. © 2001 The American Physical Society.
K. Barmak, G.A. Lucadamo, et al.
Journal of Applied Physics
R. Martel, Th. Schmidt, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
J. Knoch, J. Appenzeller, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
J.-S. Chun, J.R.A. Carlsson, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films