Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry
The interface properties of hydrogenated amorphous carbon films (a-C) on Si and GaAs substrates have been studied by in-situ photoelectron spectroscopy measurements. The a-C films have been deposited by direct ion beam deposition. Distinct differences in the interface formation have been observed during film depositon on the two substrates. The data clearly reveal a decomposition of the GaAs at the interface which can be related to the reduced adhesion of a-C: H on the compound semiconductor substrate. © 1989 Springer-Verlag.
Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
Sung Ho Kim, Oun-Ho Park, et al.
Small
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990