A.W. Kleinsasser, T.N. Jackson
Japanese Journal of Applied Physics
An electrochemical technique allowing the protection of selected areas of silicon in ethylene diamine-based etchants is reported, and its application to the formation of silicon microstructures is described. Dissolution rates for passivated samples are less than 5 Å/minute, a factor of over 3000 times less than for unpassivated silicon. Copyright © 1981 by The Institute of Electrical and Electronics Engineers, Inc.
A.W. Kleinsasser, T.N. Jackson
Japanese Journal of Applied Physics
T.F. Kuech, M.A. Tischler, et al.
Applied Physics Letters
M.A. Tischler, N.G. Anderson, et al.
Proceedings of SPIE 1989
H. Baratte, A.J. Fleischman, et al.
JES