Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Selective epitaxy is the laterally controlled growth of epitaxial material on a substrate. We have demonstrated the highly selective epitaxial growth of GaAs using diethyl gallium chloride or (C2H5)2GaCl. No GaAs growth is observed on the masking material over a wide range of growth temperatures, 600 ≤T ≤800°C. The edges of the selectively grown GaAs are bounded by the slow growth planes typical of the inorganic based growth techniques. By appropriate pre-growth treatment the electrical properties of the interface between the selectively grown material and the underlying substrate can be made to be very good with no interfacial potential barrier. © 1990.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997
J.K. Gimzewski, T.A. Jung, et al.
Surface Science
O.F. Schirmer, W. Berlinger, et al.
Solid State Communications