D.D. Nolte, M.R. Melloch, et al.
Applied Physics Letters
High-efficiency p-Ga1-xAlxAs, p-GaAs, n-GaAs solar cells are made by isothermally soaking n-GaAs substrates in an undersaturated Zn-doped Ga-Al-As melt. This one-step growth procedure produces a graded band gap p-Ga1-xAlxAs layer 0.2-0.4 μm thick. Efficiencies of 18.5% AM0 and 21.9% AM1 have been measured.
D.D. Nolte, M.R. Melloch, et al.
Applied Physics Letters
J. Woodall
JES
R.M. Feenstra, J. Woodall, et al.
Physical Review Letters
H.J. Hovel
Applied Physics Letters