High transconductance n- and p-channel GaAs MESFETs using novel amphipolar Cu3Ge ohmic contacts
- C.L. Lin
- M.O. Aboelfotoh
- et al.
- 1993
- IEDM 1993
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177 results for J. Woodall
203 μa threshold current strained V-groove lasers
- S. Tiwari
- G.D. Pettit
- et al.
- 1992
- IEDM 1992
Demonstration of npn InAs bipolar transistors with inverted base doping
- Paul E. Dodd
- Michael L. Lovejoy
- et al.
- 1996
- IEEE Electron Device Letters
Observation of bulk defects by scanning tunneling microscopy and spectroscopy: Arsenic antisite defects in GaAs
- R.M. Feenstra
- J. Woodall
- et al.
- 1993
- Physical Review Letters
InP/InGaAs Heterojunction Bipolar Transistors Grown by Gas-Source Molecular Beam Epitaxy with Carbon-Doped Base
- Russell C. Gee
- Tsung-Pei Chin
- et al.
- 1992
- IEEE Electron Device Letters
Comment on Electronic structure of ideal metal/GaAs contacts
- J. Freeouf
- J. Woodall
- et al.
- 1991
- Physical Review Letters
1.3-μm P-I-N Photodetector using GaAs with As Precipitates (Gaas:As)
- Alan C. Warren
- J.H. Burroughes
- et al.
- 1991
- IEEE Electron Device Letters
Orientation-dependent chemistry and Schottky-barrier formation at metal-GaAs interfaces
- S. Chang
- L.J. Brillson
- et al.
- 1990
- Physical Review Letters
Structure of GaAs(001) (2×4)-c(2×8) determined by scanning tunneling microscopy
- M.D. Pashley
- K.W. Haberern
- et al.
- 1988
- Physical Review Letters
Highspeed 1.3-μm GalnAs Detectors Fabricated on GaAs Substrates
- Dennis L. Rogers
- Jerry M. Woodall
- et al.
- 1988
- IEEE Electron Device Letters