K.L. Kavanagh, J.C.P. Chang, et al.
Applied Physics Letters
High-efficiency pGa1-xAlxAs, nGaAs solar cells are made by isothermally soaking n-GaAs substrates in an undersaturated Zn-doped GaAlAs melt. This one-step growth procedure produces a graded band gap pGa1-xAlxAs layer 0.2-0.4 μm thick. Efficiencies of 18.5% AM0 and 21.9% AM1 have been measured. © 1990.
K.L. Kavanagh, J.C.P. Chang, et al.
Applied Physics Letters
A.C. Callegari, D.A. Buchanan, et al.
Applied Physics Letters
J. Woodall, Alan C. Warren, et al.
IEEE T-ED
J. Freeouf, T.N. Jackson, et al.
Applied Physics Letters