Mark B. Ketchen
VLSI-TSA 2003
Compact physical models for SSOI MOSFETs are presented. The models consider strained-Si device features including mobility enhancement and band offsets with SSOI specific floating-body effect. The model validity is confirmed by fabricated 70 nm bulk strained-Si device.
Mark B. Ketchen
VLSI-TSA 2003
E. Burstein
Ferroelectrics
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
Toshiaki Kirihata
VLSI-TSA 2003