K.N. Tu
Materials Science and Engineering: A
We have investigated the effects of oxide soft breakdown (SBD) on the stability of CMOS 6T SRAM cells. Gate-to-diffusion leakage currents of 20-50jiA at the n-FET source can result in a 50% reduction of noise margin. Breakdown at other locations in the cell may be less deleterious depending on rc-FET width. This approach gives targets for tolerable values of leakage caused by gate oxide breakdown. © 2002 Elsevier Science Ltd. All rights reserved.
K.N. Tu
Materials Science and Engineering: A
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
A. Gangulee, F.M. D'Heurle
Thin Solid Films