James Warnock, Ghavam G. Shahidi, et al.
IEEE Electron Device Letters
A one-dimensional (1-D) analytical solution is derived for an undoped (or lightly-doped) double-gate MOSFET by incorporating only the mobile charge term in Poisson's equation. The solution gives closed forms of band bending and volume inversion as a function of silicon thickness and gate voltage. A threshold criterion is derived which serves to quantify the gate work function requirements for a double-gate CMOS.
James Warnock, Ghavam G. Shahidi, et al.
IEEE Electron Device Letters
Hon-Sum Wong, Yuan Taur
IEDM 1993
Yuan Taur, D.S. Zicherman, et al.
IEEE Electron Device Letters
Wen-Hsing Chang, Bijan Davari, et al.
IEEE T-ED