Self-aligned (top and bottom) double-gate MOSFET with a 25 nm thick silicon channelH.-S. WongK.K. Chanet al.1997IEDM 1997
Channel profile optimization and device design for low-power high-performance dynamic-threshold MOSFETClement WannFariborz Assaderaghiet al.1996IEDM 1996
Design and performance considerations for sub-0.1 μm double-gate SOI MOSFETsH.-S. WongD.J. Franket al.1994IEDM 1994
Three-Dimensional “Atomistic” Simulation of Discrete Random Dopant Distribution Effects in Sub-0.1μm MOSFET'sHon-Sum WongYuan Taur1993IEDM 1993