C. Lavoie, C. Cabral Jr., et al.
MRS Fall Meeting 1995
Paper
Annealing behavior of Cu and dilute Cu-alloy films: Precipitation, grain growth, and resistivity
Abstract
Annealing behavior of Cu and dilute Cu-alloy films was analyzed. Annealing at 400 °C for 5 h or 650 or 950 °C for 0 h led to a reduction in resistivity as a result of grain growth and alloy decomposition by precipitation and/or surface segregation. The higher the annealing temperature, the lower the resistivity.
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