Conference paper
Silicide formation in Ti-Si and Co-Si reactions
L. Clevenger, Q.Z. Hong, et al.
MRS Proceedings 1993
Annealing behavior of Cu and dilute Cu-alloy films was analyzed. Annealing at 400 °C for 5 h or 650 or 950 °C for 0 h led to a reduction in resistivity as a result of grain growth and alloy decomposition by precipitation and/or surface segregation. The higher the annealing temperature, the lower the resistivity.
L. Clevenger, Q.Z. Hong, et al.
MRS Proceedings 1993
A.S. Özcan, K.F. Ludwig Jr., et al.
MRS Proceedings 2002
A.S. Özean, K.F. Ludwig Jr., et al.
MRS Proceedings 2002
E.T. Yu, K. Barmak, et al.
Journal of Applied Physics