Annealing behavior of Cu and dilute Cu-alloy films: Precipitation, grain growth, and resistivity

K. Barmak; A. Gungor; C. Cabral Jr.; J.M.E. Harper

doi:10.1063/1.1589593

Journal of Applied Physics

Paper

18 Jul 2003

Annealing behavior of Cu and dilute Cu-alloy films: Precipitation, grain growth, and resistivity

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Abstract

Annealing behavior of Cu and dilute Cu-alloy films was analyzed. Annealing at 400 °C for 5 h or 650 or 950 °C for 0 h led to a reduction in resistivity as a result of grain growth and alloy decomposition by precipitation and/or surface segregation. The higher the annealing temperature, the lower the resistivity.

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