Soft x-ray diffraction of striated muscle
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
Application of the Sb-doping method to low-temperature (≤ 400 °C) processing of CuIn1 - xGaxSe2 - ySy (CIGS) solar cells is explored, using a hydrazine-based approach to deposit the absorber films. Power conversion efficiencies of 10.5% and 8.4% have been achieved for CIGS devices (0.45 cm2 device area) processed at 400 °C and 360 °C, respectively, with an Sb-incorporation level at 1.2 mol % (relative to the moles of CIGS). Significant Sb-induced grain size enhancement was confirmed for these low processing temperatures using cross-sectional scanning electron microscopy, and an average 2-3% absolute efficiency improvement was achieved in Sb-doped samples compared to their Sb-free sister samples. With Sb inclusion, the CIGS film grain growth temperature is lowered to well below 450 °C, a range compatible with flexible polymer substrate materials such as polyimide. This method opens up access to opportunities in low-temperature processing of CIGS solar cells, an area that is being actively pursued using both traditional vacuum-based as well as other solution-based deposition techniques. © 2010 Elsevier B.V. All rights reserved.
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001
M. Hargrove, S.W. Crowder, et al.
IEDM 1998
A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME