Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Impact of device structure variability of silicon nanowire FETs is assessed and SRAM design implication is presented based on 3-D numerical simulation. Both the conventional and junctionless nanowire FETs are shown to be sensitive to structural variation whereas the former is more tolerable. Both the circular wire and non-circular wire cases for feasible SRAM design with a focus on read/write noise margin are included in our study. © 2011 Elsevier Ltd. All rights reserved.
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Fernando Marianno, Wang Zhou, et al.
INFORMS 2021
Julien Autebert, Aditya Kashyap, et al.
Langmuir
T.N. Morgan
Semiconductor Science and Technology