Q.R. Huang, Ho-Cheol Kim, et al.
Macromolecules
Impact of device structure variability of silicon nanowire FETs is assessed and SRAM design implication is presented based on 3-D numerical simulation. Both the conventional and junctionless nanowire FETs are shown to be sensitive to structural variation whereas the former is more tolerable. Both the circular wire and non-circular wire cases for feasible SRAM design with a focus on read/write noise margin are included in our study. © 2011 Elsevier Ltd. All rights reserved.
Q.R. Huang, Ho-Cheol Kim, et al.
Macromolecules
J.H. Stathis, R. Bolam, et al.
INFOS 2005
Michiel Sprik
Journal of Physics Condensed Matter
E. Burstein
Ferroelectrics