Modeling polarization for Hyper-NA lithography tools and masks
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
The redistribution of implanted dopant atoms during silicide formation has attracted much interest recently because of its important implications for shallow junction device technology. Ion channeling and electrical measurements have shown that dopant atoms are pushed ahead in front of the moving silicide-silicon interface during the growth of near-noble metal silicides. However, dopant redistribution has not been observed with refractory metal silicides. This unique feature of near-noble metal silicides is discussed in conjunction with the growth kinetics of these silicides. © 1983.
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures
Frank Stem
C R C Critical Reviews in Solid State Sciences
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures