AMBIENT GAS EFFECTS ON THE REACTION OF TITANIUM WITH SILICON.
Subramanian S. Iyer, C.-Y. Ting, et al.
VLSI Science and Technology 1983
The redistribution of implanted dopant atoms during silicide formation has attracted much interest recently because of its important implications for shallow junction device technology. Ion channeling and electrical measurements have shown that dopant atoms are pushed ahead in front of the moving silicide-silicon interface during the growth of near-noble metal silicides. However, dopant redistribution has not been observed with refractory metal silicides. This unique feature of near-noble metal silicides is discussed in conjunction with the growth kinetics of these silicides. © 1983.
Subramanian S. Iyer, C.-Y. Ting, et al.
VLSI Science and Technology 1983
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
David B. Mitzi
Journal of Materials Chemistry