Learning Reduced Order Dynamics via Geometric Representations
Imran Nasim, Melanie Weber
SCML 2024
Deposited Ni, Pd, and Pt films on n-type Si have been annealed up to 700°C. Silicide formation was monitored by MeV He4 Rutherford backscattering and glancing-angle x-ray diffraction. Barrier-height measurements were performed mainly using forward I-V characteristics. The values of the barrier heights are 0.66 eV for Ni2Si and NiSi, 0.75 eV for Pd2Si; 0.85 eV for Pt2Si, and 0.87 to 0.88 eV for PtSi. The barrier heights depend primarily on the metal deposited and not on the particular silicide phase. © 1981 The American Physical Society.
Imran Nasim, Melanie Weber
SCML 2024
U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures
E. Burstein
Ferroelectrics
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films