Interfacial reaction and schottky barrier in metal-silicon systems
- G. Ottaviani
- K.N. Tu
- et al.
- 1980
- Physical Review Letters
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16 results for G. Ottaviani
Silicide formation in Ti-Si and Co-Si reactions
- L. Clevenger
- Q.Z. Hong
- et al.
- 1993
- MRS Proceedings 1993
Phase separation in alloy-Si interaction
- G. Ottaviani
- K.N. Tu
- et al.
- 2008
- Applied Physics Letters
Effect of substrate temperature on the formation of shallow silicide contacts on Si using Pd-W and Pt-W alloys
- M. Eizenberg
- G. Ottaviani
- et al.
- 2008
- Applied Physics Letters
Kinetic analysis of C49-TiSi2 and C54-TiSi2 formation at rapid thermal annealing rates
- L. Clevenger
- J.M.E. Harper
- et al.
- 1992
- Journal of Applied Physics
Low temperature oxygen dissolution in titanium
- G. Ottaviani
- F. Nava
- et al.
- 1987
- Thin Solid Films
In situ resistivity measurement of cobalt silicide formation
- G. Ottaviani
- K.N. Tu
- et al.
- 1987
- Journal of Applied Physics
AES and EELS study of ErSi2 and its behaviour under ion bombardment and oxygen exposure
- S. Valeri
- U. del Pennino
- et al.
- 1986
- Solid State Communications
Phase transformations of alloys on a reactive substrate: Interaction of binary alloys of transition and rare-earth metals with silicon
- R.D. Thompson
- K.N. Tu
- et al.
- 1985
- Journal of Applied Physics
Outdiffusion of Si through gold films: The effects of Si orientation, gold deposition techniques and rates, and annealing ambients
- Chin-An Chang
- G. Ottaviani
- 1984
- Applied Physics Letters