Daniel M. Bikel, Vittorio Castelli
ACL 2008
Thin films of BSTO show potential for use as a capacitor dielectric for future generations of dynamic random-access memory (DRAM). This report discusses progress made in the preparation of BSTO films by liquid-source metal-organic chemical vapor deposition (LS-MOCVD) and the issues related to integrating films of BSTO into a DRAM capacitor. Mechanisms influencing specific capacitance and charge loss of BSTO films are described, as are the requirements for the electrode and barrier materials used in stacked-capacitor structures.
Daniel M. Bikel, Vittorio Castelli
ACL 2008
Marshall W. Bern, Howard J. Karloff, et al.
Theoretical Computer Science
Alfonso P. Cardenas, Larry F. Bowman, et al.
ACM Annual Conference 1975
Hendrik F. Hamann
InterPACK 2013