Conference paper
Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
The behavior of chromium-vanadium layers deposited in that order on silicon substrates has been studied, as a function of heat treatment, with the aim of determining the difference of mobilities between the silicon and the metal atoms in the two respective disilicides. The motion of the silicon atoms requires temperatures of the order of 500°C, that of the metal atoms temperatures about 300°C higher. The two disilicides, previously reported to be totally soluble at 1500°C, appear to remain totally soluble at least down to 900°C. © 1989.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
Michiel Sprik
Journal of Physics Condensed Matter
Imran Nasim, Melanie Weber
SCML 2024