Ultra-thin phase-change bridge memory device using GeSb
Y.C. Chen, C.T. Rettner, et al.
IEDM 2006
Frequency doubling of diode laser radiation was achieved by operating an AR-coated diode laser in an extended laser cavity which contained a monolithic potassium niobate frequency doubling resonator as an intracavity element. Extended cavity operation ensured that the diode laser would oscillate only at frequencies that were resonant with the intracavity resonator. A diffraction grating was used to ensure single mode oscillation at the wavelength needed for noncritically phase-matched second harmonic generation. At 100 mA of injection current to the GaAlAs diode laser, 14 mW of 429 nm light were produced.
Y.C. Chen, C.T. Rettner, et al.
IEDM 2006
W.P. Risk, S.D. Lau, et al.
CBGL 1994
W.P. Risk, J.-C. Baumert, et al.
Applied Physics Letters
W.P. Risk
LEOS 1990