Enhancement-mode buried-channel In0.7Ga0.3As/ In0.52Al0.48 MOSFETs with high-κ gate dielectrics
- Yanning Sun
- E.W. Kiewra
- et al.
- 2007
- IEEE Electron Device Letters
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54 results for D.J. Webb
Impact of La2O3 thickness on HfO2/La 2O3/Ge capacitors and p-channel MOSFETs
- Caroline Andersson
- Marilyne Sousa
- et al.
- 2009
- ESSDERC 2009
High mobility III-V channel MOSFETs for post-Si CMOS applications
- Yanning Sun
- E.W. Kiewra
- et al.
- 2009
- ICICDT 2009
Interface engineering for the suppression of ambipolar behavior in Schottky-barrier MOSFETs
- H. Ghoneim
- J. Knoch
- et al.
- 2009
- ULIS 2009
CMOS scaling beyond 22 nm node
- D.K. Sadana
- S.W. Bedell
- et al.
- 2009
- ECS Meeting 2009
Gate dielectrics for high mobility semiconductors
- A. Dimoulas
- Y. Panayiotatos
- et al.
- 2008
- ECS Meeting 2008
Ge p-channel MOSFETS with La2O3 and A1 2O3 Gate dielectrics
- C. Rossel
- A. Dimoulas
- et al.
- 2008
- ESSDERC 2008
Post-Si CMOS: III-V n-MOSFETs with high-k gate dielectrics
- Yanning Sun
- S.J. Koester
- et al.
- 2007
- CS MANTECH 2007
High mobility channels for ultimate CMOS
- D.K. Sadana
- S.J. Koester
- et al.
- 2006
- ECS Meeting 2006
Scalable SDH/SONET framer architecture for DATACOM and TELCO applications
- A. Herkersdorf
- P. Buchmann
- et al.
- 2000
- International Zurich Seminar on Broadband Communications 2000