K.A. Chao
Physical Review B
A LEED (low-energy electron diffraction) intensity analysis of C {111} 1 × 1 (diamond) has given good agreement with a surface structure which has bulk positions with small relaxation of the first interlayer spacing for both insulating and semiconducting specimens. The truncated-bulk character of C{111} 1 × 1 gives support to the previously determined bulk-like structure of stabilized Si{111} 1 × 1, and casts doubt on the disordered 7 × 7 structure suggested for the stabilized 1 × 1 phase by interpretation of photoemission measurements. In both cases rather than doubt the LEED structure, one can doubt the interpretation of the photoemission measurements. © 1982.
K.A. Chao
Physical Review B
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
A. Gangulee, F.M. D'Heurle
Thin Solid Films
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009