G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
Effects of interface grading on energy levels of electrons in GaAsGa1-xAlxAs quantum wells have been estimated using both a tight-binding formalism and an effective-mass Hamiltonian of the BenDaniel-Duke form. Graded interfaces a few atomic layers thich have only a small effect on energy levels in both schemes. Self-consistent calculations for electrons in a relatively wide (40 nm) quantum well show how the lowest levels change from those characteristic of the empty well to those characteristic of two weakly coupled heterojunctions as the electron density is increased. © 1985.
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering