Channeling of ions near the silicon 〈001〉 axis

J.F. Ziegler; R.F. Lever

doi:10.1063/1.95630

Applied Physics Letters

Paper

01 Jan 1985

Channeling of ions near the silicon 〈001〉 axis

View publication

Abstract

The first experimental mapping of ion beam channels near the Si 〈001〉 axis is reported. All features are identified by theoretical plots of silicon planar channels and axial channels.

Paper

Boron diffusion in silicon at high concentrations

W.A. Orr Arienzo, R. Glang, et al.

Journal of Applied Physics

Paper

Energy-loss measurements of ⁴He ions in heavy metals

W.K. Chu, J.F. Ziegler, et al.

Applied Physics Letters

Paper

The stopping of energetic ions in solids

J.F. Ziegler

Nuclear Instruments and Methods

Paper

Specific energy loss of ⁴He ions in silicon (amorphous, polycrystalline, and single crystal)

J.F. Ziegler, M.H. Brodsky

Journal of Applied Physics

View all publications

Abstract

Related

Boron diffusion in silicon at high concentrations

Energy-loss measurements of 4He ions in heavy metals

The stopping of energetic ions in solids

Specific energy loss of 4He ions in silicon (amorphous, polycrystalline, and single crystal)

Energy-loss measurements of ⁴He ions in heavy metals

Specific energy loss of ⁴He ions in silicon (amorphous, polycrystalline, and single crystal)