Ronald Troutman
Synthetic Metals
A 1- mu m CMOS technology using thin p/p** plus epi and shallow retrograde n-well is demonstrated to be latchup free since the holding voltage for latchup is higher than the 5-V power supply. Good agreement is obtained between the experimental result and simulations using a two-dimensional finite-element numerical analysis program. The sensitivity of latchup holding voltage to epi thickness and other structural parameters is also studied in the simulation.
Ronald Troutman
Synthetic Metals
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
J.H. Stathis, R. Bolam, et al.
INFOS 2005
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990