Rajiv V. Joshi, Keunwoo Kim, et al.
IEEE Transactions on VLSI Systems
This paper describes the importance of bipolar current gain and diode ideality factor to predictions of single-event circuit responses. It then reports on measurements of parasitic bipolar transistors in 45 nm Silicon-on-Insulator (SOI) technology, and adjustments to the simulation model to match the measurements. © 2010 IEEE.
Rajiv V. Joshi, Keunwoo Kim, et al.
IEEE Transactions on VLSI Systems
Aj Kleinosowski, Ethan H. Cannon, et al.
IEEE TNS
Phil Oldiges, Robert Dennard, et al.
IEEE TNS
Zhibin Ren, Paul M. Solomon, et al.
IEDM 2002