Phil Oldiges, Chen Zhang, et al.
SISPAD 2018
Paper
Characterization of parasitic bipolar transistors in 45 nm silicon-on-insulator technology
Abstract
This paper describes the importance of bipolar current gain and diode ideality factor to predictions of single-event circuit responses. It then reports on measurements of parasitic bipolar transistors in 45 nm Silicon-on-Insulator (SOI) technology, and adjustments to the simulation model to match the measurements. © 2010 IEEE.
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