Phil Oldiges, Chen Zhang, et al.
SISPAD 2018
This paper describes the importance of bipolar current gain and diode ideality factor to predictions of single-event circuit responses. It then reports on measurements of parasitic bipolar transistors in 45 nm Silicon-on-Insulator (SOI) technology, and adjustments to the simulation model to match the measurements. © 2010 IEEE.
Phil Oldiges, Chen Zhang, et al.
SISPAD 2018
Phil Oldiges, Kenneth P. Rodbell, et al.
IEEE International SOI Conference 2010
Curtis Durfee, Subhadeep Kal, et al.
ECS Meeting 2021
Dechao Guo, Andres Bryant, et al.
IEEE Electron Device Letters